Method for cleaning, passivation and functionalization of Si—Ge semiconductor surfaces
AssigneeThe Regents of the University of California
InventorsTobin Kaufman-Osborn, Andrew C. Kummel, Kiarash Kiantaj
Life of this patent
Estimating the term…
Abstract
A method for in-situ dry cleaning of a SiGe semiconductor surface, ex-situ degreases the Ge containing semiconductor surface and removes organic contaminants. The surface is then dosed with HF (aq) or NH4F (g) generated via NH3+NH or NF3 with H2 or H2O to remove oxygen containing contaminants. In-situ dosing of the SiGe surface with atomic H removes carbon containing contaminants.
Claims6
A method for in-situ dry cleaning of a SiGe semiconductor surface, comprising:
- ex-situ, degreasing the Ge containing semiconductor surface;
- ex-situ, removing organic contaminants;
- dosing the SiGe surface with HF (aq), or with NH4F (g) generated via NH3+NF3 or via NF3 with H2 or H2O;
- in-situ dosing the SiGe surface with atomic H to remove carbon contamination;
- in-situ passivating with H2O2 (g);
- and
- in-situ nucleating with trimethylaluminum (TMA).
A method for in-situ dry cleaning of a SiGe semiconductor surface, comprising:
- ex-situ, degreasing the Ge containing semiconductor surface,
- ex-situ, removing organic contaminants,
- dosing the SiGe surface with HF through in-situ formation via NF3+atomic H;
- and
- in-situ dosing the SiGe surface with atomic H to remove carbon contamination.
A method for in-situ dry cleaning of a SiGe semiconductor surface, comprising:
- ex-situ, degreasing the Ge containing semiconductor surface;
- ex-situ, removing organic contaminants;
- dosing the SiGe surface with NH4F through in-situ thermally or plamsa mixing NH3+NF3;
- and
- in-situ dosing the SiGe surface with atomic H to remove carbon contamination.
A method for in-situ dry cleaning of a SiGe semiconductor surface, comprising:
- ex-situ, degreasing the Ge containing semiconductor surface;
- ex-situ, removing organic contaminants;
- dosing the SiGe surface with NH4F through in-situ plasma mixing of NF3 with H2 or H2O, and
- in-situ dosing the SiGe surface with atomic H to remove carbon contamination.
Dependencies are inferred from the claim text.