Beam profiling speed enhancement for scanned beam implanters

An ion implantation system for implanting ions into a workpiece, comprising:

• an ion source configured to generate an ion beam;
• a mass analyzer configured to mass analyze the ion beam;
• a beam scanner configured to scan the ion beam along a scan plane, therein defining a scanned ion beam, wherein the beam scanner is further configured to scan the ion beam at a first frequency and a second frequency, wherein the first frequency is greater than the second frequency;
• an end station configured to receive the scanned ion beam at a workpiece plane associated with the workpiece when the beam scanner scans the ion beam at the second frequency;
• a beam profiling apparatus configured to translate through the scanned ion beam along the scan plane when the ion beam is scanned at the first frequency, wherein the beam profiling apparatus is further configured to measure one or more properties of the scanned ion beam concurrent with the translation;
• and
• a controller configured determine a profile of the scanned ion beam when the ion beam is scanned at the second frequency based, at least in part, on the one or more properties of the scanned ion beam when the ion beam is scanned at the first frequency, wherein the first frequency is at least one order of magnitude greater than the second frequency.

A method for implanting ions, the method comprising:

• tuning an ion beam to a first process recipe;
• scanning the ion beam along a scan plane at a first frequency, therein defining a first scanned ion beam;
• translating a beam profiling apparatus through the first scanned ion beam;
• measuring one or more properties of the first scanned ion beam across a width of the first scanned ion beam concurrent with the translation of the beam profiling apparatus, therein defining a first beam profile associated with the first scanned ion beam;
• and
• scanning the ion beam along the scan plane at a second frequency, therein defining a second scanned ion beam, wherein the first frequency is at least twice the second frequency;
• determining a second beam profile associated with the second scanned ion beam based, at least in part, on the first beam profile;
• and
• implanting ions into a workpiece via the second scanned ion beam.

A method for implanting ions, the method comprising:

• tuning an ion beam to a first process recipe;
• scanning the ion beam along a scan plane at a first frequency, therein defining a first scanned ion beam;
• translating a beam profiling apparatus through the first scanned ion beam;
• measuring one or more properties of the first scanned ion beam across a width of the first scanned ion beam concurrent with the translation of the beam profiling apparatus, therein defining a first beam profile associated with the first scanned ion beam;
• and
• scanning the ion beam along the scan plane at a second frequency, therein defining a second scanned ion beam, wherein the first frequency is at least one order of magnitude greater than the second frequency;
• determining a second beam profile associated with the second scanned ion beam based, at least in part, on the first beam profile;
• and
• implanting ions into a workpiece via the second scanned ion beam.

A method of performing dosimetry control in an ion implantation system, comprising:

• forming an ion beam utilizing a first process recipe;
• scanning the ion beam at a first frequency along a scan plane to form a first scanned ion beam;
• measuring one or more properties of the first scanned ion beam by translating a beam profiling apparatus through the ion beam, therein defining a time and position dependent first profile associated with the first scanned ion beam;
• scanning the ion beam at a second frequency along the scan plane to form a second scanned ion beam, wherein the first frequency is at least one order of magnitude greater than the second frequency;
• determining a time and position dependent second profile associated with the second scanned ion beam based, at least in part, on the first profile;
• and
• implanting ions into a workpiece via the second scanned ion beam.