Programming to a correctable amount of errors

A method comprising:

• receiving, at a memory die and from a non-volatile storage controller, a threshold number of bit errors that are correctable by the non-volatile storage controller;
• programming, by the memory die, a set of non-volatile memory cells with a number of first program pulses;
• reading data stored to the set of non-volatile memory cells after the number of first program pulses;
• analyzing, by the memory die, whether a read number of bit errors exceeds the threshold number of bit errors;
• and
• notifying the non-volatile storage controller that the set of non-volatile memory is successfully programmed based on the result of the analysis.

A memory die apparatus comprising:

• means for receiving, from a storage controller, a correctable number of bit errors;
• means for receiving, from the storage controller, source data to be programmed to a set of memory cells;
• means for programming the set of memory cells;
• means for reading data stored to the set after a program loop cycle;
• means for analyzing whether an amount of bit errors in data read from the set is correctable based on the correctable number of bit errors;
• and
• means for signaling, to the storage controller, completion of a program command based on the analysis.