Semiconductor memory device

A semiconductor memory device, comprising:

• a stacked body including a first stacked region;
• and
• a first structure body,
• the first stacked region including
• a first selection gate electrode,
• a second selection gate electrode separated from the first selection gate electrode in a first direction,
• a plurality of first electrodes arranged in the first direction and provided between the first selection gate electrode and the second selection gate electrode,
• a plurality of second electrodes arranged in the first direction and provided between the second selection gate electrode and the first electrodes, and
• a plurality of third electrodes arranged in the first direction and provided between the first electrodes and the second electrodes,
• a first spacing between two mutually-adjacent first electrodes of the first electrodes being wider than a third spacing between two mutually-adjacent third electrodes of the third electrodes,
• a second spacing between two mutually-adjacent second electrodes of the second electrodes being wider than the third spacing,
• the first structure body including
• a first semiconductor body extending in the first direction,
• a first outer film provided between the first semiconductor body and the first stacked region,
• a first inner film provided between the first semiconductor body and the first outer film, and
• a first intermediate film provided between the first outer film and the first inner film.