Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsYuichiro Ishii, Atsushi Miyanishi, Kazumasa Yanagisawa
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Abstract
A semiconductor device includes a first mode and a second mode different from the first mode, includes a memory circuit including a first switch, a memory array, and a peripheral circuit. A first power source line is electrically coupled with an I/O circuit of the peripheral circuit and is supplied with a first voltage in the first mode. A second power source line is electrically coupled with a memory cell of the memory array, and supplied with a second voltage lower than the first voltage in the second mode.
Claims8
A semiconductor device including a first mode and a second mode different from the first mode, comprising:
- a memory circuit comprised of a first switch, a memory array, and a peripheral circuit;
- a first power source line electrically coupled with an I/O circuit of the peripheral circuit, and supplied with a first voltage in the first mode;
- and
- a second power source line electrically coupled with a memory cell of the memory array, and supplied with a second voltage lower than the first voltage in the second mode,
- wherein the first switch is comprised of a first field effect transistor and a second field effect transistor,
- wherein a source of the first field effect transistor is electrically coupled with the first power source line,
- wherein a source of the second field effect transistor is electrically coupled with the second power source line,
- wherein the first field effect transistor is formed on a first well located in a region where the memory cell is formed, and
- wherein the second field effect transistor is formed on a second well located in a region where the I/O circuit is formed.
Dependencies are inferred from the claim text.