Modeling random dopant fluctuations in semiconductor devices

A computer program product for modeling random dopant fluctuations (RDF) in a semiconductor device, the computer program product comprising a non-transitory machine-readable storage medium having program code embodied therewith, the program code being executable by a processor of a computing device to perform a method comprising:

• overlaying a finite element mesh atop a model of a layer of a semiconductor device;
• defining a first volume in the layer of the semiconductor device as a node of the finite element mesh;
• calculating a probability of finding at least one dopant atom in the first volume, based on a dopant distribution of the layer;
• in the case that the calculated probability is equal to or greater than a pre-determined threshold, defining at least one additional volume in the layer substantially equal to the first volume;
• and
• in the case that the calculated probability is less than the pre-determined threshold:
• aggregating the first volume with a second volume adjacent the first volume, the second volume being substantially equal to the first volume;
• and
• recalculating a probability of finding at least one dopant atom in the aggregated first and second volumes, based on the dopant distribution of the layer,
• wherein the machine-readable storage medium includes at least one medium selected from a group consisting of:
• an electrical connection having one or more wires, a portable computer diskette, a hard disk, a random access memory, a read-only memory, an erasable programmable read-only memory, an optical fiber, a portable compact disc read-only memory, an optical storage device, and a magnetic storage device;
• and
• employing the calculated probability to control a dopant distribution fluctuation in a manufactured semiconductor device.