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US 10,481,485 B2Granted
Mask blank, transfer mask, method of manufacturing transfer mask and method of manufacturing semiconductor device
AssigneeHoya Corporation
InventorsOsamu Nozawa, Takenori Kajiwara, Ryo Ohkubo
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Abstract
A mask blank comprising an etching stopper film. The mask blank comprises a thin film for pattern formation on a main surface of a transparent substrate, and is featured in that: the thin film for pattern formation contains silicon, an etching stopper film is provided between the transparent substrate and the thin film for pattern formation, and the etching stopper film contains silicon, aluminum, and oxygen.
Claims29
A mask blank comprising:
- a transparent substrate;
- a thin film for pattern formation provided on a main surface of the transparent substrate;
- an etching stopper film provided between the transparent substrate and the thin film for pattern formation,
- wherein the thin film for pattern formation contains silicon;
- wherein the etching stopper film is single layered film;
- and
- wherein the etching stopper film contains silicon, aluminum, and oxygen.
4 more elements
A transfer mask comprising:
- a transparent substrate;
- a thin film, having a pattern, provided on a main surface of the transparent substrate;
- an etching stopper film provided between the transparent substrate and the thin film for pattern formation,
- wherein the thin film for pattern formation contains silicon;
- wherein the etching stopper film is single layered film;
- and
- wherein the etching stopper film contains silicon, aluminum, and oxygen.
4 more elements
A method of manufacturing a semiconductor device, including:
- transferring by exposure a transfer pattern to a resist film on a semiconductor substrate using a transfer mask comprising:
- a transparent substrate;
- a thin film, having a pattern, provided on a main surface of the transparent substrate;
- an etching stopper film provided between the transparent substrate and the thin film for pattern formation,
- wherein the thin film for pattern formation contains silicon;
- wherein the etching stopper film is single layered film;
- and
- wherein the etching stopper film contains silicon, aluminum, and oxygen.
5 more elements
Dependencies are inferred from the claim text.