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US 10,481,146 B2Granted
Gas sensor and information processing system
AssigneeFujitsu Limited
InventorsSatoru Momose, Kazuaki Karasawa, Osamu Tsuboi
Life of this patent
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Abstract
A gas sensor includes a p-type semiconductor layer in which a surface at a contacting side with detection target gas is covered with tertiary amine and two electrodes electrically coupled with each other through the p-type semiconductor layer.
Claims5
A gas sensor, comprising:
- a p-type semiconductor layer whose first surface as a top surface or as at least a portion of a top surface is covered with tertiary amine such that aldehyde is detected selectively;
- and
- two electrodes electrically coupled with each other through the p-type semiconductor layer, the two electrodes being in contact with a second surface as opposing bottom surfaces or as portions of opposite sides of the portion of the top surface other than the first surface of the p-type semiconductor layer,
- wherein the surface of the tertiary amine is exposed such that the detection target gas contacts at least with the surface of the tertiary amine over a region between the two electrodes, and
- the p-type semiconductor layer contains any one material selected from the group consisting of cuprous bromide, cuprous oxide, cuprous sulfide, silver oxide, silver bromide and silver sulfide.
2 more elements
An information processing system, comprising:
- a gas sensor including a p-type semiconductor layer whose first surface as a top surface or as at least a portion of a top surface is covered with tertiary amine such that aldehyde is detected selectively and two electrodes electrically coupled with each other through the p-type semiconductor layer, the two electrodes being in contact with a second surface as opposing bottom surfaces or as portions of opposite sides of the portion of the top surface other than the first surface of the p-type semiconductor layer, wherein the surface of the tertiary amine is exposed such that the detection target gas contacts at least with the surface of the tertiary amine over a region between the two electrodes, and the p-type semiconductor layer contains any one material selected from the group consisting of cuprous bromide, cuprous oxide, cuprous sulfide, silver oxide, silver bromide and silver sulfide;
- and
- a computer configured to process data obtained by the gas sensor.
Dependencies are inferred from the claim text.