Chemical device with thin conductive element

A method for manufacturing a chemical device, the method comprising:

• forming a chemically-sensitive field effect transistor including a floating gate structure comprising a plurality of floating gate conductors electrically coupled to one another;
• forming a conductive element overlying and in communication with an uppermost floating gate conductor in the plurality of floating gate conductors, the conductive element wider and thinner than the uppermost floating gate conductor, the conductive element comprising titanium nitride;
• and
• forming a dielectric material defining an opening extending to an upper surface of the conductive element.