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US 10,481,118 B2Granted
Hydrogen sensor and method for manufacturing the same
AssigneeShin Sung C&T Co., Ltd.
InventorsWoo Young Lee, Ji Sun Baek, Byung Jin Jang
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Abstract
Disclosed are a hydrogen sensor which includes a P-type silicon nanowire array and a hydrogenation catalyst formed on a surface of the nanowire array, and a method of manufacturing the same.
Claims10
A hydrogen sensor comprising electrodes and a sensing part positioned between the electrodes, wherein electrical resistance of the sensing part changes with changes in hole concentration, wherein the sensing part comprises:
- a P-type silicon nanowire array comprising a plurality of P-type silicon nanowires;
- and
- a hydrogenation catalyst formed directly on the entire surface of the P-type silicon nanowires to form a core-shell structure and having a thickness of 1 nm to 20 nm,
- wherein the hydrogenation catalyst is configured to be reduced into a metal hydride (MHx) to form a Schottky contact between the P-type silicon nanowires and the hydrogenation catalyst, and to form a work function of the metal hydride a negative number when exposed to hydrogen such that holes inside the plurality of P-type silicon nanowires are neutralized, and
- wherein a Schottky barrier is formed by a difference between the work function of the metal hydride and the work function of the P-type silicon nanowires, and decreases a current.
2 more elements
A method for manufacturing a hydrogen sensor, the method comprising:
- obtaining a sensing part by:
- (a) forming a P-type silicon nanowire array comprising a plurality of P-type silicon nanowires by etching a P-type silicon wafer;
- and
- (b) depositing a hydrogenation catalyst directly on the entire surface of the P-type silicon nanowires to form a core-shell structure having a thickness of 1 nm to 20 nm,
- wherein the hydrogenation catalyst is configured to be reduced into a metal hydride (MHx) to form a Schottky contact between the P-type silicon nanowires and the hydrogenation catalyst, and to form a work function of the metal hydride a negative number when exposed to hydrogen such that holes inside the plurality of P-type silicon nanowires are neutralized, and
- wherein a Schottky barrier is formed by a difference between the work function of the metal hydride and the work function of P-type silicon nanowires, and decreases a current, and
- wherein electrical resistance of the sensing part changes with changes in hole concentration;
- and
- positioning the sensing part between electrodes.
6 more elements
Dependencies are inferred from the claim text.