System for rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow

A system for vapor deposition on a semiconductor substrate, comprising:

• a reaction chamber;
• a reducing agent source connected to feed a gas containing reducing agent into the reaction chamber;
• one or more reactant sources each connected to feed a reactant gas into the reaction chamber;
• a substrate support housed within the reaction chamber, wherein the reaction chamber is configured to convey a generally horizontal flow of reactant gases above the substrate support along a gas flow path;
• an upper bank of substantially linear heat lamps above the substrate support, each lamp of the upper bank being oriented substantially perpendicular to the gas flow path and substantially parallel to a plane in which a substrate resting upon the substrate support would reside;
• a lower bank of heat lamps below the substrate support;
• and
• a computer programmed to control the upper and lower banks of heat lamps, gas flow from the reducing agent source, and the one or more reactant sources to (1) provide power to the upper and lower banks of lamps to subject a substrate resting upon the substrate support to a bake in the presence of said gas containing the reducing agent for less than 45 seconds, (2) stabilize the substrate temperature after the bake, and (3) feed said one or more reactant gases into the reaction chamber to deposit a layer by vapor deposition directly onto the substrate after stabilizing the temperature.