Apparatus for radical-based deposition of dielectric films

A dual-channel showerhead, comprising:

• a first surface;
• a second surface opposite the first surface and spaced from the first surface, wherein an internal volume and one or more annular channels in fluid communication with the internal volume are defined between the first surface and the second surface, and wherein the one or more annular channels surround the internal volume;
• a plurality of tubes extending from the first surface to the second surface through the internal volume, wherein the plurality of tubes is fluidly isolated from the internal volume;
• a first inlet connected to the one or more annular channels;
• and
• a second inlet positioned to direct radicals to the internal volume bypassing the one or more annular channels, wherein the first inlet and the second inlet are located on the same surface that is distinct from the first surface and the second surface.

An apparatus, comprising:

• a radical source;
• and
• a processing chamber coupled to the radical source, wherein the processing chamber comprises:
• a substrate support;
• and
• a dual-channel showerhead disposed between the radical source and the substrate support, wherein the dual-channel showerhead comprises:
• a first surface facing the radical source;
• a second surface facing the substrate support and spaced from the first surface, wherein an internal volume and one or more channels are defined between the first surface and the second surface, and wherein the one or more channels surround the internal volume;
• a plurality of tubes extending from the first surface to the second surface through the internal volume, wherein the plurality of tubes is fluidly isolated from the internal volume;
• a first inlet connected to the one or more channels;
• and
• a second inlet positioned to direct radicals to the internal volume bypassing the one or more channels, wherein the first inlet is positioned to provide a gas to a location upstream of the one or more channels, and the second inlet is positioned to provide radicals to a location downstream of the one or more channels.