Sputtering apparatus and sputtering method using the same

A sputtering deposition method using a sputtering apparatus, which includes a first magnetic part to form a magnetic field in a first plasma area adjacent to a first target and a second magnetic part spaced from the first plasma area in a first direction and to form a magnetic field in a second plasma area adjacent to a second target, the method comprising:

• providing a substrate to a substrate holder;
• applying power to the first and second targets to form a plasma in the first and second plasma areas;
• applying a control voltage which is greater than a first power voltage to a control anode facing the substrate holder in a second direction crossing the first direction, with the first and second plasma areas therebetween, the first power voltage of a power supply being lower than a preset first target voltage and a first power current of the power supply being greater than a preset first target current;
• sputtering the first and second targets using the plasma such that target materials of the first and second targets are deposited on the substrate, and
• rotating at least one of first or second magnetic holder substrates, wherein:
• the first and second magnetic parts are on the first and second magnetic holder substrates, respectively, and
• the first magnetic holder substrate rotates the first magnetic part to satisfy the condition of θE<θM;
• wherein the θE is an erosion angle of the magnetic field generated by the first magnetic part, and the θM is a reference angle defined as an angle formed by a virtual line connected to the control anode from the first magnetic part and a normal line perpendicular to the first magnetic holder substrate.