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US 10,480,061 B2Granted
Sputtering target
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsDa-Ming Zhuang, Ming Zhao, Ming-Jie Cao, Li Guo, Shi-Lu Zhan, Xiao-Long Li
Life of this patent
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Abstract
A sputtering target includes an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2. A relative density of the sputtering target is larger than or equal to 90%. A bulk resistance of the sputtering target in a range from about 10−2 Ωcm to about 10 Ωcm. A weight percentage of crystalline In2CexZnO4+2x in the sputtering target is larger than 80%.
Claims12
A sputtering target comprising an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2.
Dependencies are inferred from the claim text.