Polishing method
AssigneeFujimi Incorporated
InventorsYukinobu Yoshizaki, Satoru Yarita, Shogo Onishi
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Abstract
The present invention provides a means allowing achievement of sufficient planarization of the surface of an object to be polished containing two or more types of materials. The present invention is a polishing method for polishing an object to be polished containing two or more types of materials by using a polishing composition, the polishing method including equalization of the surface zeta potential of the object to be polished.
Claims6
A polishing method for polishing an object to be polished containing tungsten and at least one of silicon oxide film and silicon nitride by using a polishing composition, the polishing method comprising
- equalization of the surface zeta potential of said tungsten and at least one of said silicon oxide film and said silicon nitride,
- wherein the equalization is carried out by including a potential equalizing agent having an adsorbing group for adsorption onto said tungsten and at least one of said silicon oxide film and said silicon nitride and a functional group for providing zeta potential in the polishing composition,
- wherein the potential equalizing agent is dicyandiamide diethylenetriamine formalin condensate.
A polishing method for polishing an object to be polished containing tungsten and at least one of silicon oxide film and silicon nitride by using a polishing composition, the polishing method comprising
- equalization of the surface zeta potential of said tungsten and at least one of said silicon oxide film and said silicon nitride,
- wherein the equalization is carried out by impregnating the object to be polished in a potential equalizing agent having an adsorbing group for adsorption onto said tungsten and at least one of silicon oxide film and silicon nitride and a functional group for providing zeta potential,
- wherein the potential equalizing agent is dicyandiamide diethylenetriamine formalin condensate.
Dependencies are inferred from the claim text.