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US 10,475,658 B2Granted
Formulations to selectively etch silicon and germanium
AssigneeEntegris, Inc.
InventorsSteven Bilodeau, Emanuel I. Cooper
Life of this patent
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Abstract
Compositions useful for the selective removal of silicon-containing materials relative to germanium-containing materials, and vice versa, from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required Si:Ge removal selectivity and etch rates.
Claims11
A method of selectively removing silicon-containing material from the surface of a microelectronic device relative to germanium-containing material, said method comprising:
- providing a microelectronic device comprising silicon-containing material and germanium-containing material;
- and
- selectively etching the silicon-containing material relative to the germanium-containing material by contacting a silicon selective composition with the surface of the microelectronic device for time and temperature necessary to selectively remove silicon-containing material relative to germanium-containing material, wherein the silicon selective composition comprises from about 70 wt % to about 99 wt % of at least one diol compound, from about 0.01 wt % to about 5 wt % of at least one fluoride species, and from about 0.01 wt % to about 10 wt % of at least one oxidizing species.
Dependencies are inferred from the claim text.