Selective deposition of metal silicides
AssigneesApplied Materials, Inc., The Regents of the University of California
InventorsRaymond Hung, Namsung Kim, Srinivas Nemani, Ellie Yieh, Jong Choi, Christopher Ahles, Andrew Kummel
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Abstract
Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate.
Claims18
A substrate processing method, comprising:
- heating a substrate having a silicon containing surface to a first temperature;
- exposing the substrate to a plasma comprising hydrogen, wherein the plasma comprising hydrogen is formed from one or more precursors selected from the group consisting of NF3, NH3, and H;
- exposing the substrate to a first dosage of a MoF6 precursor;
- exposing the substrate to a second dosage of a Si2H6 precursor;
- sequentially cycling the exposing the substrate to a first dosage and the exposing the substrate to a second dosage;
- and
- after the sequential cycling, exposing the substrate to a third dosage of the Si2H6 precursor.
A substrate processing method, comprising:
- positioning a substrate on a heater in a reaction chamber having chamber walls;
- heating the substrate on the heater to a first temperature;
- maintaining the chamber walls at a second temperature less than the first temperature;
- exposing a silicon containing surface of the substrate to hydrogen, wherein the exposing a silicon containing surface of the substrate comprises exposing the silicon containing surface to either of a plasma formed from NF3/H2 gases or a plasma formed from NF3/NH3 gases;
- exposing the substrate to a first dosage of a MoF6 precursor;
- exposing the substrate to a second dosage of a Si2H6 precursor;
- sequentially cycling the exposing the substrate to a first dosage and the exposing the substrate to a second dosage;
- and
- after the sequential cycling, exposing the substrate to a third dosage of the Si2H6 precursor.
A substrate processing method, comprising:
- heating a substrate to a first temperature;
- exposing a silicon containing surface of the substrate to a hydrogen containing plasma, the hydrogen containing plasma formed from one or more of an NF3 precursor, and NH3 precursor, and a precursor consisting of H;
- exposing the substrate to a first dosage of a MoF6 precursor;
- exposing the substrate to a second dosage of a Si2H6 precursor;
- sequentially cycling the exposing the substrate to a first dosage and the exposing the substrate to a second dosage;
- after the sequential cycling, exposing the substrate to a third dosage of the Si2H6 precursor;
- and
- annealing the substrate after the exposing the substrate to a third dosage at a second temperature of between about 500° C. and about 550° C.
Dependencies are inferred from the claim text.