Method for copper filling of a hole in a component carrier

Abstract

A method of filling a hole formed in a component carrier with copper is disclosed. The method comprises i) forming a layer of an electrically conductive material covering at least part of a surface of a wall, wherein the wall delimits the hole, and subsequently ii) covering at least partially the layer and filling at least partially an unfilled volume of the hole with copper using a plating process including a bath. Hereby, the bath comprises a concentration of a copper ion, in particular Cu2+, in a range between 50 g/L and 75 g/L, in particular in a range between 60 g/L and 70 g/L.

Dependencies are inferred from the claim text.