Die with integrated microphone device using through-silicon vias (TSVs)

A computing device comprising:

• a circuit board;
• and
• a die electrically coupled with the circuit board, the die including:
• a semiconductor substrate having a first side and a second side opposite to the first side;
• an interconnect layer on the first side of the semiconductor substrate;
• a first through-silicon via (TSV) through the semiconductor substrate, the first TSV to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate;
• a microphone device on the second side of the semiconductor substrate and electrically coupled with the first TSV;
• a device layer on the first side of the semiconductor substrate, wherein the first TSV is to route electrical signals between an active device of the device layer and the microphone device;
• and
• a second TSV to structurally support the microphone device, wherein the second TSV is not to route electrical signals between the device layer and the microphone device.

An apparatus comprising:

• a semiconductor substrate having a first side and a second side opposite to the first side;
• an interconnect layer on the first side of the semiconductor substrate;
• a through-silicon via (TSV) through the semiconductor substrate, the TSV to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate;
• a microphone device on the second side of the semiconductor substrate and electrically coupled with the TSV, wherein the microphone device comprises:
• a back-plate on the second side of the semiconductor substrate and coupled with the TSV;
• and
• a membrane film coupled with the back-plate to form a capacitor;
• a lid to cover the microphone device;
• a passivation layer on the second side of the semiconductor substrate, wherein the passivation layer is between at least a portion of the back-plate and the semiconductor substrate;
• and
• a cavity layer on the passivation layer and having a cavity formed in the cavity layer, wherein the membrane film is in the cavity and the lid is coupled with the cavity layer.