Image sensor and image capturing apparatus
AssigneeCanon Kabushiki Kaisha
InventorHideki Ikedo
Life of this patent
Estimating the term…
Abstract
An image sensor in which at least a portion of an imaging plane thereof has a curved shape, wherein the imaging plane includes a plurality of pixels that are two-dimensionally arranged, each of the plurality of pixels having: a photoelectric conversion region that is provided with an impurity region of a first conductivity type that is formed in a semiconductor substrate; and an impurity region of a second conductivity type that is formed on a substrate surface side of the photoelectric conversion region, and impurity concentration in the impurity region of the second conductivity type varies depending on a position on the imaging plane.
Claims14
An image sensor in which at least a portion of an imaging plane thereof has a curved shape, wherein the imaging plane includes a plurality of pixels that are two-dimensionally arranged, each of the plurality of pixels having:
- a photoelectric conversion region that is provided with an impurity region of a first conductivity type that is formed in a semiconductor substrate;
- and an impurity region of a second conductivity type that is formed on a substrate surface side of the photoelectric conversion region, and impurity concentration in the impurity region of the second conductivity type varies depending on a position on the imaging plane and a relative dark current amount in the corresponding photoelectric conversion region.
An image capturing apparatus comprising:
- an image sensor in which at least a portion of an imaging plane thereof has a curved shape, wherein the imaging plane includes a plurality of pixels that are two-dimensionally arranged, each of the plurality of pixels having a photoelectric conversion region that is provided with an impurity region of a first conductivity type that is formed in a semiconductor substrate and an impurity region of a second conductivity type that is formed on a substrate surface side of the photoelectric conversion region, and impurity concentration in the impurity region of the second conductivity type varies depending on a position on the imaging plane and a relative dark current amount in the corresponding photoelectric conversion region;
- and
- a sensitivity correction circuit that corrects sensitivity for each pixel region of the image sensor.
Dependencies are inferred from the claim text.