Photodetector with reduced dark current

Photodetector, comprising:

• a photon absorbing region formed by a first semiconductor material having a first bandgap energy value,
• a contact region made from semiconductor material,
• a blocking region formed by (i) at least one layer of a second semiconductor material and at least two layers of a third semiconductor material or (ii) at least two layers of a second semiconductor material and at least one layer of a third semiconductor material, the second semiconductor material being configured to oppose flow of majority charge carriers between the photon absorbing region and the contact region, the second semiconductor material presenting a second bandgap energy value higher than the first bandgap energy value, the third semiconductor material having a third bandgap energy value different from the second bandgap energy value,
• wherein the blocking region is doped and
• wherein the layers of second and third semiconductor materials form at least one quantum well in the blocking region.