Amorphous boron nitride dielectric
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorsNicholas Glavin, Chris Muratore, Timothy Fisher, Andrey Voevodin
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Abstract
A nanoelectronics structure is disclosed which includes a substrate layer which has least a first surface and also has a thickness of less than 100 nm. The nanoelectronics structure also includes a dielectric layer, which is deposited on the first surface of the substrate layer and has a thickness of less than 100 nm. This dielectric layer is made up of at least 90 mole percent amorphous boron nitride. Also disclosed is a method for forming a dielectric layer on a substrate using pulsed laser deposition.
Claims10
A nanoelectronics structure comprising:
- a substrate layer having at least a first surface and having a thickness of less than 100 nm;
- and
- a dielectric layer deposited on the first surface of the substrate layer and having a thickness of less than 100 nm,
- wherein the dielectric layer comprises at least 90 mole percent amorphous boron nitride and exhibits a bandgap from about 4.0 eV to about 5.0 eV.
A nanoelectronics structure comprising:
- a substrate layer having at least a first surface and having a thickness of less than 20 nm;
- and
- a dielectric layer deposited on the first surface of the substrate layer and having a thickness of less than 20 nm,
- wherein the substrate layer comprises a two-dimensional substrate material selected from the group consisting of molybdenum disulfide (MoS2) and graphene, and
- wherein the dielectric layer comprises at least 90 mole percent amorphous boron nitride.
Dependencies are inferred from the claim text.