Method of forming semiconductor device
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsFeng-Yi Chang, Fu-Che Lee
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Abstract
A method of forming a semiconductor device includes following steps. First of all, a substrate is provided, and a stacked structure is formed on the substrate. Then, a patterned silicon-containing mask layer is formed on the stacked structure, and the stacked structure is partially removed through the patterned silicon-containing mask layer, to form plural openings in the stacked structure. Following these, a bromine covering process is performed, to form a bromide layer on a portion of the patterned silicon-containing mask layer, and a bromide sublimation process is then performed, to completely remove the bromide layer.
Claims10
A method of forming a semiconductor device, comprising:
- providing a substrate;
- forming a stacked structure on the substrate;
- forming a patterned silicon-containing mask layer on the stacked structure;
- partially removing the stacked structure through the patterned silicon-containing mask layer, to form a plurality of openings in the stacked structure;
- performing a bromine covering process, to from a bromide layer on surfaces of the patterned silicon-containing mask layer;
- and
- performing a bromide sublimation process, to completely remove the bromide layer.
Dependencies are inferred from the claim text.