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US 10,375,812 B2Granted
Low electron temperature, edge-density enhanced, surface-wave plasma (SWP) processing method and apparatus
AssigneeTokyo Electron Limited
InventorsJianping Zhao, Lee Chen, Merritt Funk, Radha Sundararajan
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Abstract
A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.
Claims9
A plasma source comprising:
- a multiple winding coil disposed around the perimeter of a processing space, said coil including a conductive wire having a center winding, a first end, and a second end;
- said coil configured with said center winding disposed in an innermost winding layer, and with said first end and said second end extending therefrom;
- said first end being wrapped in a first direction and said second end being wrapped in a second direction opposite said first direction, to form a dipole pair and complete the innermost winding layer, and the first and second ends being further wrapped progressively radially outwardly from the innermost winding layer to form successive dipole pairs in successive radial winding layers, from the innermost winding layer and out to an outermost winding layer and to said first and second ends;
- each of said winding layers being configured to include at least one dipole pair;
- and
- said plasma source further including an energy source coupled to said first end and said second end and configured to provide a balanced Radio Frequency signal to said coil.
3 more elements
Dependencies are inferred from the claim text.