Imaging device

An imaging device comprising

• a first pixel cell including
• a first photoelectric converter that generates a first signal by photoelectric conversion, the first photoelectric converter including a first electrode and a first photoelectric conversion region on the first electrode, and
• a first amplifier transistor a gate of which is electrically connected to the first electrode;
• and
• a second pixel cell including
• a second photoelectric converter that generates a second signal by photoelectric conversion, the second photoelectric converter including a second electrode and a second photoelectric conversion region on the second electrode, and
• a second amplifier transistor a gate of which is electrically connected to the second electrode, wherein
• a sensitivity of the first pixel cell is higher than a sensitivity of the second pixel cell, and
• a gate width of the gate of the first amplifier transistor is larger than a gate width of the gate of the second amplifier transistor.

An imaging device comprising

• a first pixel cell including
• a first photoelectric converter that generates a first signal by photoelectric conversion, the first photoelectric converter including a first electrode and a first photoelectric conversion region on the first electrode, and
• a first reset transistor one of a source and a drain of which is electrically connected to the first electrode;
• and
• a second pixel cell including
• a second photoelectric converter that generates a second signal by photoelectric conversion, the second photoelectric converter including a second electrode and a second photoelectric conversion region on the second electrode, and
• a second reset transistor one of a source and a drain of which is electrically connected to the second electrode, wherein
• a sensitivity of the first pixel cell is higher than a sensitivity of the second pixel cell, and
• a gate length of a gate of the first reset transistor is larger than a gate length of a gate of the second reset transistor.

An imaging device comprising

• a first pixel cell including
• a first photoelectric converter that generates a first signal by photoelectric conversion, the first photoelectric converter including a first electrode and a first photoelectric conversion region on the first electrode,
• a first amplifier transistor a gate of which is electrically connected to the first electrode,
• a first reset transistor one of a source and a drain of which is electrically connected to the first electrode,
• a first capacitive element one end of which is electrically connected to the first electrode,
• a second capacitive element one end of which is electrically connected to the other end of the first capacitive element, a reference voltage being applied to the other end of the second capacitive element, a capacitance value of the second capacitive element being larger than a capacitance value of the first capacitive element,
• a first band control transistor one of a source and a drain of which is connected to the other end of the first capacitive element, and
• a first feedback circuit;
• a second pixel cell including
• a second photoelectric converter that generates a second signal by photoelectric conversion, the second photoelectric converter including a second electrode and a second photoelectric conversion region on the second electrode, and
• a second amplifier transistor a gate of which is electrically connected to the second electrode;
• and
• an inverting amplifier, wherein
• a sensitivity of the first pixel cell is higher than a sensitivity of the second pixel cell, and
• the first feedback circuit forms a feedback path for negatively feeding back a voltage of the first electrode via the first amplifier transistor, the inverting amplifier, the first band control transistor, and the first capacitive element.

An imaging device comprising

• a first pixel cell including
• a first photoelectric converter that generates a first signal by photoelectric conversion, the first photoelectric converter including a first electrode and a first photoelectric conversion region on the first electrode,
• a first amplifier transistor a gate of which is electrically connected to the first electrode,
• a first reset transistor one of a source and a drain of which is electrically connected to the first electrode,
• a first capacitive element one end of which is electrically connected to the first electrode,
• a second capacitive element one end of which is electrically connected to the other end of the first capacitive element, a reference voltage being applied to the other end of the second capacitive element, a capacitance value of the second capacitive element being larger than a capacitance value of the first capacitive element,
• a first band control transistor one of a source and a drain of which is connected to the other end of the first capacitive element, and
• a first feedback circuit;
• and
• a second pixel cell including
• a second photoelectric converter that generates a second signal by photoelectric conversion, the second photoelectric converter including a second electrode and a second photoelectric conversion region on the second electrode, and
• a second amplifier transistor a gate of which is electrically connected to the second electrode, wherein
• a sensitivity of the first pixel cell is higher than a sensitivity of the second pixel cell,
• one of a source and a drain of the first amplifier transistor is electrically connected to the other of the source and the drain of the first band control transistor, and
• the first feedback circuit forms a feedback path for negatively feeding back a voltage of the first electrode via the first amplifier transistor, the first band control transistor, and the first capacitive element.

An imaging device comprising

• a first pixel cell including
• a first photoelectric converter that generates a first signal by photoelectric conversion, the first photoelectric converter including a first electrode and a first photoelectric conversion region on the first electrode,
• a first amplifier transistor a gate of which is electrically connected to the first electrode,
• a first reset transistor one of a source and a drain of which is electrically connected to the first electrode,
• a first capacitive element one end of which is electrically connected to the first electrode,
• a second capacitive element one end of which is electrically connected to the other end of the first capacitive element, a reference voltage being applied to the other end of the second capacitive element, a capacitance value of the second capacitive element being larger than a capacitance value of the first capacitive element,
• a first band control transistor one of a source and a drain of which is connected to the other end of the first capacitive element, and
• a first feedback circuit;
• and
• a second pixel cell including
• a second photoelectric converter that generates a second signal by photoelectric conversion, the second photoelectric converter including a second electrode and a second photoelectric conversion region on the second electrode, and
• a second amplifier transistor a gate of which is electrically connected to the second electrode, wherein
• a gate of the first band control transistor is electrically connected to the first electrode;
• and
• the first feedback circuit forms a feedback path for negatively feeding back a voltage of the first electrode via the first band control transistor and the first capacitive element.