Imaging device including photoelectric conversion layer

An imaging device comprising:

• unit pixel cells each including a first electrode, a second electrode facing the first electrode, a photoelectric conversion layer between the first electrode and the second electrode, a charge accumulation region electrically connected to the first electrode, and a signal detection circuit electrically connected to the charge accumulation region;
• and
• a voltage supply circuit electrically connected to the second electrode, the voltage supply circuit supplying a first voltage to the second electrode in a first period, the voltage supply circuit supplying a second voltage that is different from the first voltage to the second electrode in a second period different from the first period, wherein
• the unit pixel cells each include a reset transistor that is electrically connected to the charge accumulation region, the reset transistor switching between supply and cutoff of a reset voltage for initializing the charge accumulation region, and
• a potential difference between the first electrode and the second electrode when the reset voltage is supplied is greater than a potential difference between the first electrode and the second electrode after the reset voltage is cut off.