Delay-time correction circuit, semiconductor-device drive circuit, and semiconductor device

A semiconductor-device drive circuit configured to drive a plurality of semiconductor switching elements that are connected in parallel with each other,

• said semiconductor-device drive circuit comprising a plurality of drive circuit units that are separately connected to said plurality of semiconductor switching elements, each of said plurality of drive circuit units comprising
• a drive unit configured to generate a drive signal, and
• a delay-time correction circuit configured to delay an input signal that is externally input for generating a pre-drive signal to said drive unit, said delay-time correction circuit comprising
• a transition-change sensor configured to sense a transition change in one of a turn-on operation and turn-off operation of each of said plurality of semiconductor switching elements,
• a correction-signal generator configured to generate a correction signal in response to said transition change sensed by said transition-change sensor and to said input signal, and
• a delay output unit configured to generate an output signal corresponding to said pre-drive signal by delaying said input signal using said correction signal,
• wherein said delay output unit is configured to delay said output signal that instructs the other of a turn-on operation and turn-off operation, from said input signal, in accordance with a length of a period for said transition change in the one of a turn-on operation and turn-off operation that is performed immediately before the other of a turn-on operation and turn-off operation.