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US 10,374,596 B2Granted
Semiconductor device for radio frequency switch, radio frequency switch, and radio frequency module
AssigneeSony Corporation
InventorAtsushi Kuranouchi
Life of this patent
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Abstract
Provided is a semiconductor device for radio frequency switch that includes an SOI substrate and a gate electrode. The SOI substrate includes a buried oxide film and a semiconductor layer on a carrier substrate. The gate electrode is provided on the semiconductor layer. The semiconductor layer includes a first area below the gate electrode and a second area other than the first area. A third area is provided in at least part of the second area. A fourth area is provided in at least part of the first area. The fourth area has a different thickness from a thickness of the third area.
Claims17
A semiconductor device for radio frequency switch, comprising:
- a Silicon On Insulator (SOI) substrate that includes:
- a buried oxide film on a carrier substrate;
- a semiconductor layer on the buried oxide film;
- and
- a gate electrode on the semiconductor layer,
- wherein the semiconductor layer includes:
- a first area between the gate electrode and the buried oxide film,
- a second area different from the first area,
- a third area in at least a part of the second area,
- a fourth area in at least a part of the first area, wherein a thickness of the fourth area is different from a thickness of the third area,
- an interlayer insulating film on the gate electrode, and
- a low dielectric area in the interlayer insulating film, wherein a dielectric constant of the low dielectric area is lower than a dielectric constant of the interlayer insulating film.
9 more elements
A semiconductor device for radio frequency switch, comprising:
- a Silicon On Insulator (SOI) substrate that includes:
- a buried oxide film on a carrier substrate;
- a semiconductor layer on the buried oxide film;
- and
- a gate electrode, on the semiconductor layer, which extends in one direction, wherein the semiconductor layer includes:
- a first are, and
- a seventh second area;
- an interlayer insulating film on the gate electrode, and
- a low dielectric area in the interlayer insulating film, wherein
- a dielectric constant of the low dielectric area is lower than a dielectric constant of the interlayer insulating film,
- a thickness of the second area is different from a thickness of the first area, and
- the first area is alternate to the second area along a lengthwise direction of the gate electrode.
9 more elements
A radio frequency switch, comprising:
- a switch region that includes a first semiconductor device for a radio frequency switching process, and
- a logic region that includes a second semiconductor device for logic,
- wherein the first semiconductor device for the radio frequency switching process comprises:
- a Silicon On Insulator (SOI) substrate including:
- a buried oxide film on a carrier substrate;
- a semiconductor layer on the buried oxide film;
- and
- a first gate electrode on the semiconductor layer,
- wherein the semiconductor layer includes:
- a first area between the first gate electrode and the buried oxide film,
- a second area different from the first area,
- a third area in at least a part of the second area,
- a fourth area in at least a part of the first area, wherein a thickness of the fourth area having a is different from a thickness of the third area,
- an interlayer insulating film on the first gate electrode, and
- a low dielectric area in the interlayer insulating film, wherein a dielectric constant of the low dielectric area is lower than a dielectric constant of the interlayer insulating film.
12 more elements
A radio frequency switch, comprising:
- a switch region that includes a first semiconductor device for a radio frequency switching process, and
- a logic region that includes a second semiconductor device for logic,
- wherein the first semiconductor device for the radio frequency switching process comprises:
- a Silicon On Insulator (SOI) substrate including:
- a buried oxide film on a carrier substrate;
- a semiconductor layer on the buried oxide film;
- and
- a gate electrode, on the semiconductor layer, which extends in one direction, wherein the semiconductor layer includes:
- a first area, and
- a second area,
- an interlayer insulating film on the gate electrode, and
- a low dielectric area in the interlayer insulating film, wherein
- a dielectric constant of the low dielectric area is lower than a dielectric constant of the interlayer insulating film,
- a thickness of the second area is different from a thickness of the first area, and
- the first area is alternate to the second area along a lengthwise direction of the gate electrode.
12 more elements
A radio frequency module, comprising:
- a radio frequency switch,
- the radio frequency switch that includes:
- a switch region comprising a first semiconductor device for a radio frequency switching process, and
- a logic region comprising a second semiconductor device for logic,
- wherein the first semiconductor device for the radio frequency switching process comprises:
- a Silicon On Insulator (SOI) substrate including:
- a buried oxide film on a carrier substrate;
- a semiconductor layer on the buried oxide film;
- and
- a gate electrode on the semiconductor layer,
- wherein the semiconductor layer includes:
- a first area between the gate electrode and the buried oxide film,
- a second area different from the first area,
- a third area in at least a part of the second area,
- a fourth area in at least a part of the first area, wherein a thickness of the fourth area is different from a thickness of the third area;
- an interlayer insulating film on the gate electrode, and
- a low dielectric area in the interlayer insulating film, wherein a dielectric constant of the low dielectric area is lower than a dielectric constant of the interlayer insulating film.
14 more elements
A radio frequency module, comprising:
- a radio frequency switch,
- the radio frequency switch that includes:
- a switch region comprising a first semiconductor device for a radio frequency switching process, and
- a logic region comprising a second semiconductor device for logic,
- wherein the first semiconductor device for the radio frequency switching process comprises:
- a Silicon On Insulator (SOI) substrate including:
- a buried oxide film on a carrier substrate;
- a semiconductor layer on the buried oxide film;
- and
- a gate electrode, on the semiconductor layer, which extends in one direction, wherein the semiconductor layer includes:
- a first area, and
- a second area,
- an interlayer insulating film on the gate electrode, and
- a low dielectric area in the interlayer insulating film, wherein:
- a dielectric constant of the low dielectric area is lower than a dielectric constant of the interlayer insulating film,
- a thickness of the second area is different from a thickness of the first area, and
- the first area is alternate to the second area are along a lengthwise direction of the gate electrode.
14 more elements
Dependencies are inferred from the claim text.