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US 10,374,595 B1Granted
Self-adjustable RF switch cell
AssigneeInfineon Technologies AG
InventorWinfried Bakalski
Life of this patent
Estimating the term…
Abstract
An RF switch includes two or more coupled RF switch cells, each RF switch cell including a transistor having a first source/drain node, a second source/drain node, and a gate node, a first varactor is coupled between the first source/drain node and the gate node, and a second varactor is coupled between the second source/drain node and the gate node.
Claims20
A self-adjustable RF switch cell comprising:
- a transistor comprising a first current node, a second current node, and a control node;
- a first circuit having a voltage-adjustable capacitive element coupled between the first current node and the control node;
- and
- a second circuit having a voltage-adjustable capacitive element matched to the first circuit coupled between the second current node and the control node,
- wherein the first and second circuits are configured for maintaining an operating condition of the self-adjustable RF switch cell independently of substrate parasitic elements.
2 more elements
An RF switch comprising:
- a plurality of series-coupled RF switch cells, at least one of the RF switch cells comprising:
- a transistor comprising a first current node, a second current node, and a control node;
- a first varactor coupled between the first current node and the control node;
- and
- a second varactor coupled between the second current node and the control node.
2 more elements
A method of operating an RF switch comprising a plurality of RF switch cells, at least one of the switch cells including a transistor, the method comprising:
- adjusting a first capacitor coupled between a first current node of the transistor and a control node of the transistor according to a voltage across the at least one of the RF switch cells;
- and
- adjusting a second capacitor coupled between a second current node of the transistor and the control node of the transistor according to the voltage across the at least one of the RF switch cells.
Dependencies are inferred from the claim text.