US 10,374,594 B2 · Semiconductor device

Abstract

The semiconductor device according to one embodiment includes a power transistor and a sense transistor connected in parallel with each other, a first operational amplifier having a non-inverting input terminal connected to an emitter of the sense transistor and an inverting input terminal connected to an emitter of the power transistor, a resistor element having one end connected to the emitter of the sense transistor and another end connected to a first node, and an adjustment transistor placed between the first node and a low-voltage power supply. The first operational amplifier adjusts a current flowing through the adjustment transistor so that an emitter voltage of the power transistor and an emitter voltage of the sense transistor are substantially the same.

Claims10

Dependent claims

A semiconductor integrated circuit configured to drive a gate of an external power transistor, the semiconductor integrated circuit comprising:

a first terminal configured to input a first voltage of an emitter of the external power transistor;
a second terminal configured to input a second voltage of a sense emitter of the external power transistor;
a third terminal configured to input a sense voltage corresponding to a current flow through the sense emitter of the external power transistor;
a fourth terminal configured to output a feedback voltage based on the difference between the first voltage and the second voltage;
a fifth terminal configured to output a driving voltage to the gate of the external power transistor;
a driver circuit configured to generate the driving voltage;
and
a protection circuit configured to turn down the driving voltage based on the sense voltage.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims10