Microwave transmitter with improved information throughput

An RF amplifier module comprising:

• a package having a package base,
• at least one RF amplifier chip attached to said package base, said RF amplifier chip comprising a substrate and at least one transistor disposed in an epilayer overlying said substrate, and
• an RF power combiner chip attached to said package base, wherein a first layer of synthetic diamond is at least partially disposed on top of said at least one transistor;
• and
• wherein said package base comprises synthetic diamond.

A high-power RF transmitter comprising:

• a system housing,
• at least one RF amplifier module comprising:
• a package,
• at least one input port, at least one output port,
• at least one RF amplifier chip attached to said package, said RF amplifier chip comprising at least one transistor comprising an epilayer overlying a substrate, wherein said substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity, and wherein said RF amplifier chip comprises a second layer of synthetic diamond disposed adjacent to said at least one transistor,
• an RF power combiner coupled to said output port, and
• a heat conducting element.