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US 10,374,392 B1Granted
Optical device structure using GaN substrates and growth structures for laser applications
AssigneeSoraa Laser Diode, Inc.
InventorJames W. Raring
Life of this patent
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Abstract
Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
Claims15
An optical device comprising:
- a gallium nitride substrate member having a semipolar or nonpolar crystalline surface region;
- an n-type gallium nitride region overlying the surface region;
- an n-side SCH layer comprising InGaN overlying the n-type gallium nitride region;
- an active region overlying the n-side SCH layer, the active region comprising multiple quantum wells each having InGaN;
- a p-side SCH layer comprising InGaN overlying the active region;
- a laser stripe region formed overlying the p-side SCH layer, the laser stripe region characterized by a cavity orientation substantially parallel to a first-direction, the laser stripe region having a first end and a second end, the laser stripe region comprising a p-type gallium nitride region;
- an n-type metal region overlying a backside of the gallium nitride substrate member;
- an overlying p-type metal region overlying an upper portion of the laser stripe region;
- a first cleaved m-face facet provided on the first end of the laser stripe region;
- and
- a second cleaved m-face facet provided on the second end of the laser stripe region, wherein the first cleaved m-face facet is substantially parallel with the second cleaved m-face facet.
8 more elements
An optical device comprising:
- a gallium nitride substrate member having a semipolar or nonpolar crystalline surface region;
- an n-type GaN cladding layer overlying the surface region;
- an n-side SCH layer overlying the n-type GaN cladding layer, the n-side SCH layer comprised of InGaN;
- a multiple quantum well active region overlying the n-side SCH layer, the multiple quantum well active region comprised of InGaN quantum wells separated by GaN barriers;
- a p-side SCH layer overlying the multiple quantum well active region, the p-side SCH layer comprised of InGaN;
- an electron blocking layer overlying the p-side SCH layer, the electron blocking layer comprised of AlGaN doped with magnesium;
- a p-type GaN cladding layer overlying the electronic blocking layer, the p-type GaN cladding layer having a magnesium doping;
- a p++-type GaN contact layer with a magnesium doping;
- a laser stripe region having a first end and a second end;
- a first cleaved m-face facet provided on the first end of the laser stripe region;
- and
- a second cleaved m-face facet provided on the second end of the laser stripe region.
9 more elements
Dependencies are inferred from the claim text.