Implant regrowth VCSEL and VCSEL array with heterogeneous combination of different VCSEL types

A non-planarized vertical cavity surface emitting laser (VCSEL) comprising:

• a substrate;
• an active region over the substrate;
• a blocking layer over the substrate and under the active region, the blocking layer having a planar bottom surface and a planar top etched surface with a first thickness between the planar bottom surface and planar top etched surface, wherein the blocking layer is a first material having an implant;
• and
• a conductive channel layer in the blocking layer, the conductive channel layer having a planar bottom surface that is continuous with the planar bottom surface of the blocking layer, the conductive channel layer having a side etched surface extending from the planar top etched surface of the blocking layer to a planar top surface of the conductive channel layer such that the conductive channel layer has a second thickness that is larger than the first thickness of the blocking layer, wherein the conductive channel layer is the first material devoid of the implant, wherein the blocking layer laterally bounds a bottom region of the conductive channel layer that extends from the planar top etched surface of the blocking layer to the planar bottom surface of the blocking layer and/or conductive channel layer;
• and
• a non-planarized semiconductor region under the active region and having a plurality of non-planarized semiconductor layers, each non-planarized semiconductor layer having a lower step over the blocking layer and an upper step over the conductive channel layer, wherein the non-planarized semiconductor region laterally bounds the side etched surface of the conductive channel layer.