Plasmonic mode III-V laser as on-chip light source
AssigneesInternational Business Machines Corporation, The George Washington University
InventorsNing Li, Ke Liu, Devendra K. Sadana, Volker J. Sorger
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Abstract
A plasmonic light source includes a substrate and a square nano-cavity formed on the substrate. The nano-cavity includes a quantum well structure. The quantum well structure includes III-V materials. A plasmonic metal is formed as an electrode on the square nano-cavity and is configured to excite surface plasmons with the quantum well structure to generate light. Complementary metal oxide semiconductor (CMOS) devices are formed on the substrate.
Claims20
A plasmonic light source, comprising:
- a nano-cavity quantum well structure including III-V materials disposed on a contact layer formed on a complementary metal oxide semiconductor (CMOS) substrate;
- and
- a plasmonic metal formed as an electrode on the nano-cavity and configured to excite surface plasmons with the quantum well structure to generate light to form a nano-cavity light source with low parasitic capacitance.
A method for forming an on-chip plasmonic light source, comprising:
- oxide wafer bonding a quantum well structure formed on a III-V substrate with an oxide formed on a silicon substrate;
- removing the III-V substrate to transfer the quantum well structure to the silicon substrate;
- and
- forming a plasmonic metal as an electrode on the quantum well structure to form a nano-cavity light source.
Dependencies are inferred from the claim text.