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US 10,374,189 B2Granted
Opto-electronic element and method for manufacturing the same
AssigneeSamsung Display Co., Ltd.
InventorDong Chan Kim
Life of this patent
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Abstract
An opto-electronic element according to an exemplary embodiment of the present disclosure includes a transparent conductive layer including a first material made of a metal and a second material made of a metal halide.
Claims27
An opto-electronic element comprising:
- a transparent conductive layer formed by a reaction of a first material made of a metal and a second material made of a metal halide,
- wherein the transparent conductive layer is a single layer,
- wherein the metal halide of the second material comprises at least one selected from the group consisting of chloride, bromide and iodide of Group 1 elements, chloride, bromide and iodide of Group 2 elements, Lanthanide halides, Actinide halides, halides of transition metals, and halides of post transition metals, and
- wherein the metal of the first material comprises at least one selected from the group consisting of Yb, Tm, Sm, Eu, Gd, La, Ce, Pr, Nd, Pm, Tb, Dy, Ho, Er, Lu, Ac, Th, and Pa.
1 more element
A method for manufacturing an opto-electronic element, the method comprising:
- forming a transparent conductive layer by a reaction of a first material made of a metal and a second material made of a metal halide,
- wherein the transparent conductive layer is a single layer,
- wherein the metal halide of the second material comprises at least one selected from the group consisting of chloride, bromide and iodide of Group 1 elements, chloride, bromide and iodide of Group 2 elements, Lanthanide halides, Actinide halides, halides of transition metals, and halides of post transition metals, and
- wherein the metal of the first material comprises at least one selected from the group consisting of Yb, Tm, Sm, Eu, Gd, La, Ce, Pr, Nd, Pm, Tb, Dy, Ho, Er, Lu, Ac, Th, and Pa.
1 more element
Dependencies are inferred from the claim text.