Light-emitting device and manufacturing method thereof

An electronic device comprising:

• a housing;
• a display panel comprising a transistor, wherein the display panel comprises a display region, the display region comprising a first region and a second region, the first region disposed at a front of the housing, and the second region disposed between the first region and an edge of the display panel,
• wherein the transistor is formed over a first insulating layer;
• wherein the display panel is bent at least in a region between the first region and the second region,
• wherein the display region overlaps with the region where the display panel is bent,
• wherein the display panel comprises:
• a flexible substrate;
• a driving circuit portion over the flexible substrate, comprising:
• the transistor comprising:
• a gate over the flexible substrate;
• a second insulating layer over the gate;
• a semiconductor layer over the second insulating layer;
• a source over the semiconductor layer;
• a drain over the semiconductor layer;
• a third insulating layer over the semiconductor layer, the source, and the drain, a part of the third insulating layer being in contact with a part of the semiconductor layer between the source and the drain;
• and
• a conductive layer over the third insulating layer, the conductive layer overlapping with the gate and a channel region of the transistor, wherein the channel region is between the source and the drain;
• and
• a terminal portion comprising:
• a first electrode layer over the flexible substrate;
• the second insulating layer over the first electrode layer, the second insulating layer including a first contact hole;
• a second electrode layer over and in contact with the first electrode layer through the first contact hole;
• the third insulating layer over the second electrode layer, the third insulating layer including a second contact hole;
• and
• a third electrode layer over and in contact with the second electrode layer through the second contact hole,
• wherein the first electrode layer is formed from a same layer as the gate,
• wherein the second electrode layer is formed from a same layer as the source and the drain, and
• wherein the third electrode layer is formed from a same layer as the conductive layer.

An electronic device comprising:

• a housing;
• a display panel having a display region, wherein the display panel comprises a display element and a transistor electrically connected to the display element;
• and
• a touch panel,
• wherein the transistor is formed over a first insulating layer,
• wherein the display panel includes a region where the display panel is bent,
• wherein the display region and the touch panel overlap with the region where the display panel is bent,
• wherein the display panel comprises:
• a flexible substrate;
• a driving circuit portion over the flexible substrate, comprising:
• the transistor comprising:
• a gate over the flexible substrate;
• a second insulating layer over the gate;
• a semiconductor layer over the second insulating layer;
• a source over the semiconductor layer;
• a drain over the semiconductor layer;
• a third insulating layer over the semiconductor layer, the source, and the drain, a part of the third insulating layer being in contact with a part of the semiconductor layer between the source and the drain;
• and
• a conductive layer over the third insulating layer, the conductive layer overlapping with the gate and a channel region of the transistor, wherein the channel region is between the source and the drain;
• and
• a terminal portion comprising:
• a first electrode layer over the flexible substrate;
• the second insulating layer over the first electrode layer, the second insulating layer including a first contact hole;
• a second electrode layer over and in contact with the first electrode layer through the first contact hole;
• the third insulating layer over the second electrode layer, the third insulating layer including a second contact hole;
• and
• a third electrode layer over and in contact with the second electrode layer through the second contact hole,
• wherein the first electrode layer is formed from a same layer as the gate,
• wherein the second electrode layer is formed from a same layer as the source and the drain, and
• wherein the third electrode layer is formed from a same layer as the conductive layer.