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US 10,374,163 B2Granted
Intermetallic contact for carbon nanotube FETs
AssigneeInternational Business Machines Corporation
InventorsMatthew W. Copel, Damon B. Farmer, Talia S. Gershon, Paul M. Solomon
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Abstract
A field effect transistor includes a carbon nanotube layer formed adjacent to a gate structure. Two intermetallic contacts are formed on the carbon nanotube layer. The two intermetallic contacts include an oxidation resistant compound having a work function below about 4.4 electron-volts.
Claims20
A method for forming a field effect transistor, comprising:
- forming a gate dielectric on a gate electrode;
- forming a carbon nanotube layer on the gate dielectric;
- and
- forming intermetallic contacts on the carbon nanotube layer, the intermetallic contacts including an oxidation resistant compound having a work function below 4.4 electron-volts.
1 more element
A method for forming a field effect transistor, comprising:
- forming a gate electrode with a substrate;
- depositing a gate dielectric on the gate electrode;
- forming a carbon nanotube layer on the gate dielectric;
- patterning the carbon nanotube layer;
- and
- depositing intermetallic contacts on the carbon nanotube layer, the intermetallic contacts including an oxidation resistant compound having oxidation resistance better than lanthanum.
3 more elements
Dependencies are inferred from the claim text.