Back to results
US 10,374,148 B1Granted
Multi-resistance MRAM
AssigneeSanDisk Technologies LLC
InventorsYoung-Suk Choi, Won Ho Choi
Life of this patent
Estimating the term…
Abstract
Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.
Claims11
An apparatus comprising:
- a magnetic tunnel junction (MTJ) for storing data, the magnetic tunnel junction comprising:
- a reference layer;
- a free layer separated from the reference layer by a barrier layer, the free layer configured such that one or more resistance states for the MTJ correspond to one or more positions of a magnetic domain wall within the free layer;
- and
- a domain stabilization layer coupled to a portion of the free layer, the domain stabilization layer configured to prevent migration of the domain wall into the portion of the free layer.
2 more elements
Dependencies are inferred from the claim text.