Perpendicular magnetic tunnel junction having improved reference layer stability

A magnetic random access memory element comprising:

• a magnetic reference layer;
• a magnetic free layer;
• and
• a non-magnetic barrier layer, located between the magnetic reference layer and the magnetic free layer;
• the magnetic reference layer comprising:
• first and second magnetic layers;
• a separation layer located between the first and second layers;
• and
• a layer of Hf.

A magnetic random access memory system, comprising:

• a plurality of magnetic memory elements;
• and
• circuitry configured to write data to the plurality of magnetic memory elements and read data from the plurality of magnetic memory elements;
• each of the plurality of magnetic memory elements further comprising:
• a magnetic reference layer;
• a magnetic free layer;
• and
• a non-magnetic barrier layer, located between the magnetic reference layer and the magnetic free layer;
• and
• the magnetic reference layer comprising at least one magnetic layer and a layer of Hf;
• wherein the layer of Hf is located between the at least one magnetic layer and the non-magnetic barrier layer or the layer of Hf is located within the magnetic reference layer between a pair of magnetic layers.