Light-emitting element with electrode structure

A light-emitting element, comprising:

• a substrate comprising a surface;
• a light-emitting semiconductor stack, formed on the substrate, comprising:
• a first semiconductor layer;
• a second semiconductor layer on the first semiconductor layer;
• and
• a light-emitting layer between the first semiconductor layer and the second semiconductor layer;
• a first electrode on the first semiconductor layer;
• a first protection layer covering a sidewall of the light-emitting semiconductor stack;
• a second protection layer comprising a first through hole exposing the first electrode and a plurality of second through holes, wherein the second protection layer covers and surrounds the first protection layer, and the first protection layer and the second protection layer directly contact a surface of the first semiconductor layer, wherein two of the plurality of second through holes are formed on opposite sides of the first electrode from a top view of the light-emitting element, wherein the first through hole is not between the two of the plurality of second through holes;
• a reflective layer formed on the light-emitting semiconductor stack;
• and
• a conductive contact layer formed on the second protection layer,
• wherein the light-emitting semiconductor stack, the first electrode, the first protection layer, the second protection layer, the reflective layer, and the conductive contact layer respectively comprises a first inclined side surface relative to the surface of the substrate, and wherein an angle between a side face and a lower face of the first electrode ranges from 15 degrees to 70 degrees.