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US 10,374,127 B2Granted
Electronic devices with nanorings, and methods of manufacture thereof
AssigneeNXP USA, Inc.
InventorNirmal David Theodore
Life of this patent
Estimating the term…
Abstract
Systems and methods for electronic devices are presented. A device includes a substrate. An Indium Gallium Nitride (InGaN) nanoring is formed over the substrate. The InGaN nanoring includes an alloy of Indium Nitride (InN) and Gallium Nitride (GaN). The alloy includes at least 6 percent Indium. A GaN layer may be formed over the InGaN nanoring, and a first electrode is formed over the GaN layer. In one embodiment, the alloy includes less than about 70 percent Indium.
Claims17
A device, comprising:
- a substrate;
- an n-type Gallium Nitride (GaN) layer formed over the substrate;
- a plurality of Indium Gallium Nitride (InGaN) nanorings formed over the n-type GaN layer, each InGaN nanoring of the plurality of InGaN nanorings including an alloy of Indium Nitride (InN) and Gallium Nitride (GaN), the alloy including at least 6 percent Indium, each InGaN nanoring of the plurality of InGaN nanorings having a maximum diameter of less than 100 nanometers and a height of less than 20 nanometers;
- a p-type GaN layer formed over and around the plurality InGaN nanorings, the p-type GaN layer having a thickness between 10 nanometers and 1000 nanometers, the p-type GaN layer being directly and physically connected between each InGaN nanoring of the plurality of InGaN nanorings and in direct contact with a portion of the n-type GaN layer not covered by the plurality of InGaN nanorings, wherein some portion of the p-type GaN layer is formed under a portion of each InGaN nanoring of the plurality of InGaN nanorings;
- and
- a first electrode formed over the plurality of InGaN nanorings.
3 more elements
A device, comprising:
- a substrate;
- a n-type GaN layer formed over the substrate;
- and
- a plurality of device stacks over the n-type GaN layer, each device stack in the plurality of device stacks including:
- a plurality of nanorings formed-over the n-type GaN layer, each nanoring of the plurality of nanorings including an Indium Gallium Nitride (InGaN) material, the InGaN material including at least 6 percent Indium and having a maximum diameter of less than 100 nanometers;
- a p-type GaN coating formed on and around each of the plurality of nanorings, the p-type GaN coating being directly and physically connected between each nanoring of the plurality of nanorings and in contact with the n-type GaN layer not covered by each of the plurality of nanorings, wherein some portion of the p-type GaN coating is formed under a portion of each nanoring of the plurality of nanorings;
- and
- a first electrode formed over the plurality of nanorings.
5 more elements
A method, comprising:
- forming a n-type semiconductor layer over a substrate;
- forming a plurality of nanorings over the n-type semiconductor layer, each nanoring of the plurality of nanorings including materials exhibiting a lattice size mismatch with the substrate that exceeds 2 percent;
- forming a p-type semiconductor layer over the plurality of nanorings wherein the p-type semiconductor layer is directly and physically connected and between each nanoring of the plurality of nanorings, wherein some portion of the p-type semiconductor layer is formed under a portion of each nanoring of the plurality of nanorings;
- forming a first electrode over the plurality of nanorings;
- and
- forming a second electrode on the substrate.
3 more elements
Dependencies are inferred from the claim text.