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US 10,374,122 B2Granted
Controlling oxygen concentration levels during processing of highly-reflective contacts
AssigneeSoraa, Inc.
InventorsChristophe Hurni, Remi Delille
Life of this patent
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Abstract
Techniques for controlling oxygen concentration levels during annealing of highly-reflective contacts for LED devices together with lamps, LED device and method embodiments thereto are disclosed.
Claims21
An optoelectronic semiconductor device having a contact prepared by the method comprising:
- depositing a silver layer on a semiconductor surface of the optoelectronic semiconductor device to define an interface with the semiconductor surface;
- after the silver layer is deposited, depositing one or more additional layers on the silver layer to form a metallic stack, at least one of the one or more additional layers comprising an oxygen-gettering metal;
- introducing a predetermined dose of oxygen into the metallic stack;
- diffusing a portion of the oxygen-gettering metal to the interface;
- and
- diffusing a portion of the oxygen to the interface.
3 more elements
An optoelectronic semiconductor device having a contact prepared by the method comprising:
- (a) providing a gallium and nitrogen-containing semiconductor device;
- after (a), (b) depositing a first silver layer on at least one surface of the semiconductor to define an interface with the semiconductor surface;
- after (b),(c) depositing a nickel layer on the first silver layer;
- after (c), (d) depositing a second silver layer on the nickel layer;
- and
- after (d),(e) annealing the device in an oxygen-containing ambient environment to introduce a predetermined dose of oxygen into the optoelectronic semiconductor device and to diffuse at least a portion of nickel in the nickel layer and a portion of the oxygen through the first silver layer to the interface.
3 more elements
A method of preparing reflective and electrically conductive Ag-based contacts on an optoelectronic semiconductor device, comprising:
- depositing a silver layer on a surface of the semiconductor device to define an interface with the semiconductor surface;
- depositing a nickel layer comprising nickel on the silver layer;
- lifting off a portion of the nickel layer and the silver layer using an oxygen-containing solvent;
- and
- annealing the device in an oxygen-containing ambient environment to introduce a predetermined dose of oxygen into the optoelectronic semiconductor device and to diffuse at least a portion of the nickel and a portion of the oxygen through the silver layer to the interface.
2 more elements
Dependencies are inferred from the claim text.