Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

A method for producing an optoelectronic semiconductor component, the method comprising:

• A) providing a semiconductor layer sequence having a first main side, a first layer on the first main side, an active layer on the first layer, a second layer on the active layer and a second main side on the second layer;
• B) applying a plurality of second contact elements to the second main side, wherein the second contact elements are arranged next to one another and spaced apart from one another in a lateral direction, parallel to a main extension direction of the active layer;
• C) introducing recesses in form of holes or trenches from the second main side into the semiconductor layer sequence, wherein the recesses completely penetrate the second layer and the active layer and open into the first layer, and wherein the recesses are arranged laterally next to the second contact elements in a plan view of the second main side;
• D) applying a intermediate layer to side walls of the recesses running transversely to the active layer so that the intermediate layer directly adjoins the semiconductor layer sequence;
• E) directly applying a metallic mirror layer to the intermediate layer in a region of the side walls;
• and
• F) applying a metallic injection element to bottom surfaces of the recesses directly adjoining the first layer, wherein subsequently no further metallic element is arranged between the injection element and the bottom surfaces, and wherein the injection element and the mirror layer have different material compositions.

An optoelectronic semiconductor component comprising:

• a semiconductor layer sequence comprising:
• a first main side;
• a first layer arranged at the first main side;
• an active layer disposed on the first layer;
• a second layer disposed on the active layer;
• and
• a second main side arranged at the second layer;
• a first contact element arranged on the second main side, the first contact element fills a recess in the semiconductor layer sequence, wherein the recess extends from the second main side completely through the second layer and the active layer and opens out into the first layer;
• and
• a plurality of second contact elements applied to the second main side parallel to the second main side and spaced apart from one another in a lateral direction, the second contact elements are arranged laterally next to the recess in a plan view of the second main side,
• wherein the first contact element comprises a transparent intermediate layer, a metallic mirror layer and a metallic injection element,
• wherein the intermediate layer is arranged on side walls of the recess running transversely to the active layer and is in direct contact with the semiconductor layer sequence,
• wherein the mirror layer is applied directly to the intermediate layer in a region of the side walls,
• wherein the injection element is placed on a bottom surface of the recess directly adjoining the first layer and no further metallic element is arranged between the injection element and the bottom surface,
• wherein, during operation, the intermediate layer prevents a direct current flow between the second layer and the first contact element,
• wherein a contour of the second contact element forms a shape, size and position of an image point of the semiconductor component which is illuminated when looking onto the first main side during operation,
• wherein the injection element and the mirror layer have different material compositions, and
• wherein each of the second contact elements is uniquely assigned to an image point.