Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode

A lateral single-photon avalanche diode, comprising:

• a semiconductor body comprising a semiconductor material of a first type of electric conductivity;
• a trench having a sidewall arranged in the semiconductor body;
• anode and cathode terminals,
• wherein the semiconductor material comprises a junction region of the first type of electric conductivity near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall;
• and
• a semiconductor layer of an opposite second type of electric conductivity arranged at the sidewall of the trench directly adjacent to the junction region,
• wherein the anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively,
• wherein a plane upper surface of the semiconductor body is present outside the trench, and a counterdoped region of the first type of electric conductivity separates the junction region and the semiconductor layer of the second type of electric conductivity from the plane upper surface,
• wherein the trench intersects the plane upper surface of the semiconductor body,
• wherein the semiconductor layer and the junction region form a pn-junction with one another, and
• wherein the anode and cathode terminals and the counterdoped region extend to the plane upper surface.