Optoelectronic device including a buried metal grating for extraordinary optical transmission (EOT)

An optoelectronic device including a buried extraordinary optical transmission (EOT) structure, the optoelectronic device comprising:

• an etched body comprising:
• a buried metal contact layer disposed on a top surface of a semiconductor structure comprising one or more semiconductor layers, the buried metal contact layer comprising an arrangement of holes therein;
• and
• a plurality of nanopillar structures protruding from the top surface of the semiconductor structure and passing through the arrangement of holes, each nanopillar structure being surrounded at a base thereof by a surrounding portion of the buried metal contact layer,
• wherein, when the etched body is exposed to incident radiation having a wavelength in the range from about 300 nm to about 10 microns, at least about 50% of the incident radiation is transmitted through the etched body at a peak transmission wavelength λmax.