Static random access memory (SRAM) device for improving electrical characteristics and logic device including the same

A semiconductor device, comprising:

• a first inverter including a first load transistor and a first drive transistor;
• and
• a first transfer transistor connected to an output node of the first inverter,
• wherein the first load transistor includes a plurality of first multi-bridge channels, a first gate, and a first source region and a first drain region on both sides of the first gate and the first multi-bridge channels,
• the first drive transistor includes a plurality of second multi-bridge channels, a second gate extended from the first gate, and a second source region and a second drain region on both sides of the second gate and the second multi-bridge channels,
• the first transfer transistor includes a plurality of third multi-bridge channels, a third gate separated from the first and the second gates, and a third source region and a third drain region on both sides of the third gate and the third multi-bridge channels,
• the number of the plurality of third multi-bridge channels is greater than the number of the plurality of first multi-bridge channels,
• the first load transistor is a p-type metal oxide semiconductor (PMOS) transistor,
• each of the first drive transistor and the first transfer transistor is an n-type metal oxide semiconductor (NMOS) transistor,
• the first gate and the second gate are arranged in a first direction on a substrate, and the first multi-bridge channels are arranged in a second direction that is perpendicular to the first direction and between the first source region and the first drain region on the substrate, and the second multi-bridge channels are arranged in the second direction and between the second source region and the second drain region on the substrate,
• the third gate is arranged in the first direction on the substrate, and the third multi-bridge channels are arranged in the second direction and between the third source region and the third drain region on the substrate, and
• the first, the second and the third source and drain regions have a same height from the substrate.