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US 10,374,091 B2Granted
Silicon germanium fin immune to epitaxy defect
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Juntao Li, Xin Miao
Life of this patent
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Abstract
A method for forming a semiconductor structure includes forming at least one fin on a semiconductor substrate. The least one fin includes a semiconducting material. A gate is formed over and in contact with the at least one fin. A germanium comprising layer is formed over and in contact with the at least one fin. Germanium from the germanium comprising layer is diffused into the semiconducting material of the at least one fin.
Claims16
A method of forming a semiconductor structure, the method comprising:
- forming at least one fin on a semiconductor substrate, the least one fin comprising a semiconductor material;
- forming a gate over and in contact with the at least one fin, wherein the gate is a dummy gate;
- depositing a germanium comprising layer over and in contact with an exposed top surface of the at least one fin;
- diffusing germanium from the germanium comprising layer into the semiconducting material of the at least one fin;
- removing the gate after the germanium has been diffused;
- and
- forming a gate stack over and in contact with the at least one fin after the gate has been removed.
4 more elements
A method of forming a semiconductor structure, the method comprising:
- forming a plurality of fins on a semiconductor substrate, each fin of the plurality of fins comprising a semiconductor material;
- forming a plurality of gates, wherein each gate of the plurality of gates is formed over a portion of each fin of the plurality of fins, wherein each of the plurality of gates is a dummy gate;
- depositing a plurality of germanium comprising layers, wherein each germanium comprising layer of the plurality of germanium comprising layers is deposited over and in contact with an exposed top surface of one fin of the plurality of fins;
- diffusing germanium from the plurality of germanium comprising layers into the semiconducting material of the plurality of fins;
- removing the gate after the germanium has been diffused;
- and
- forming a plurality gate stacks after each of the gates has been removed, wherein each gate stack of the plurality of gate stacks is formed over and in contact a portion of each fin of the plurality of fins.
4 more elements
Dependencies are inferred from the claim text.