Semiconductor device

A semiconductor device, comprising:

• a first active region that extends on a substrate in a first direction;
• a second active region that extends on the substrate in the first direction and in parallel with the first active region;
• an element isolation region between the first active region and the second active region;
• a first gate structure that extends in a second direction different from the first direction, and intersects the first and second active regions;
• a second gate structure that extends in the second direction and intersects the first and second active regions, the second gate structure being spaced apart from the first gate structure in the first direction;
• a lower contact that includes, between the first gate structure and the second gate structure, a first portion arranged on the first active region, a second portion arranged on the element isolation region, and a third portion arranged on the second active region;
• and
• an upper contact on the second portion of the lower contact, the upper contact having a width in the first direction that is narrower than a width of the second portion of the lower contact in the first direction,
• wherein a width of the first portion of the lower contact in the first direction is narrower than the width of the second portion of the lower contact in the first direction.

A semiconductor device, comprising:

• first to fourth active regions that extend on a substrate in a first direction, respectively, and are spaced apart from one another in sequence in a second direction different from the first direction;
• a gate structure that extends in the second direction and intersects the first to fourth active regions;
• a first element isolation region between the first active region and the second active region;
• a second element isolation region between the second active region and the third active region;
• a third element isolation region between the third active region and the fourth active region;
• a lower contact spaced apart from the gate structure in the first direction, the lower contact being on the first to fourth active regions and the first to third element isolation regions;
• a first upper contact on the lower contact that overlaps the first element isolation region;
• a second upper contact on the lower contact that overlaps the second element isolation region;
• and
• a third upper contact on the lower contact that overlaps the third element isolation region,
• wherein a width of the lower contact in the first direction that overlaps each of the first to fourth active regions is narrower than a width of the lower contact in the first direction that overlaps each of the first to third element isolation regions.