Vertical channel devices and method of fabricating same

A method of forming a vertical channel device, the method comprising:

• forming a first vertical channel structure extending from a first bottom electrode region and a second vertical channel structure extending from a second bottom electrode region, wherein the first and the second vertical channel structures protrude from a dielectric layer covering the first and second bottom electrode regions;
• forming a first hole exposing the first bottom electrode region and a second hole exposing the second bottom electrode region, wherein the first and the second holes extend vertically through the dielectric layer;
• forming a gate level conductor including at least one conductive layer, wherein the gate level conductor fills the first and the second holes and embeds protruding portions of the first and second vertical channel structures;
• and
• forming a conductive pattern including a set of discrete pattern parts on the dielectric layer, wherein forming the conductive pattern includes:
• forming a first pattern part including a first gate portion wrapping around a protruding portion of the first vertical channel structure, wherein a first bottom electrode contact portion is arranged in the second hole, and a first cross-coupling portion extends between the first bottom electrode contact portion and the first gate portion,
• forming a second pattern part including a second gate portion wrapping around a protruding portion of the second vertical channel structure, wherein a second bottom electrode contact portion is arranged in the first hole, and a second cross-coupling portion extends between the second bottom electrode contact portion and the second gate portion,
• forming an etch mask above the gate level conductor, wherein the etch mask includes a first discrete mask portion for defining the first pattern part and a second discrete mask portion for defining the second pattern part, and
• etching the gate level conductor in a region exposed by the etch mask.