Semiconductor devices and a method for forming a semiconductor device

A semiconductor device, comprising:

• a plurality of striped-shaped trenches extending into a semiconductor substrate,
• wherein at least one trench of a first group of trenches of the plurality of striped-shaped trenches is located between two trenches of a second group of trenches of the plurality of striped-shaped trenches,
• wherein a gate of a transistor structure is located in each trench of the second group of trenches and a gate insulation layer is located between the gate and the semiconductor substrate in each trench of the second group of trenches,
• wherein a trench insulation material is located in each trench of the first group of trenches,
• wherein a thickness of the trench insulation material throughout each trench of the first group of trenches is at least two times larger than a thickness of the gate insulation layer in each trench of the second group of trenches,
• wherein a field electrode located in each trench of the second group of trenches is located laterally between a first gate of a first transistor structure and a second gate of a second transistor structure located in each trench of the second group of trenches.

A semiconductor device, comprising:

• a plurality of striped-shaped trenches extending into a semiconductor substrate,
• wherein at least one trench of a first group of trenches of the plurality of striped-shaped trenches is located between two trenches of a second group of trenches of the plurality of striped-shaped trenches,
• wherein a gate of a transistor structure is located in each trench of the second group of trenches and a gate insulation layer is located between the gate and the semiconductor substrate in each trench of the second group of trenches,
• wherein a trench insulation material is located in each trench of the first group of trenches,
• wherein a thickness of the trench insulation material throughout each trench of the first group of trenches is at least two times larger than a thickness of the gate insulation layer in each trench of the second group of trenches,
• wherein each trench of the first group of trenches comprises an electrode-free region,
• wherein the electrode-free region occupies an equivalent location and volume in each trench of the first group of trenches as occupied by the gate in each trench of the second group of trenches,
• wherein a field electrode located in each trench of the second group of trenches is located laterally between a first gate of a first transistor structure and a second gate of a second transistor structure located in each trench of the second group of trenches.